Published 1992
| Version v1
Book
On the suppression of the supercurrent in Nb/Al Josephson tunnel junctions
Creators
- 1. Twente Univ. (Netherlands). Low Temperature Group
- 2. Space Research Organization of the Netherlands, Utrecht (Netherlands). Lab. for Space Research
Description
The critical currents of Nb/Al, Al-oxide, Al/Nb tunnel junctions of various shapes were measured as a function of the applied magnetic field, including square, diamond, '1+cosine' and quartic junctions. The measurements are generally found to be in good agreement with theory. Fiske resonances in the various junctions have been measured as function of the applied field. In the diamond shaped junction not only one-dimensional modes were excited, but also several two-dimensional resonance modes could be identified. In the '1+cosine' and quartic junctions many resonance modes were observed. (R.P.) 14 refs.; 5 figs.; 1 tab
Additional details
Publishing Information
- Publisher
- Editions Frontieres.
- Imprint Place
- Paris (France)
- ISBN
- 2-86332-113-7
- Imprint Title
- Low temperature detectors for neutrinos and dark matter IV
- Imprint Pagination
- [528 p.].
- Journal Page Range
- p. 255-263.
Conference
- Title
- 4. International workshop on low temperature detectors for neutrinos and dark matter.
- Dates
- 4-7 Sep 1991.
- Place
- Oxford (United Kingdom).
INIS
- Country of Publication
- France
- Country of Input or Organization
- France
- INIS RN
- 24052565
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALUMINIUM; ALUMINIUM OXIDES; CONFIGURATION; CRITICAL CURRENT; JOSEPHSON JUNCTIONS; MAGNETIC FIELDS; NIOBIUM; RESONANCE; SUPERCONDUCTIVITY; X-RAY DETECTION
- Descriptors DEC
- ALUMINIUM COMPOUNDS; CHALCOGENIDES; CURRENTS; DETECTION; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRICAL PROPERTIES; ELEMENTS; METALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RADIATION DETECTION; SEMICONDUCTOR JUNCTIONS; TRANSITION ELEMENTS