Published 1989 | Version v1
Report Open

Irradiation of: MOS field effect structures effect of the radiation dose

Creators

Description

The radiation effects on the structure and the operation of a metal-oxide semiconductor (MOS) are studied. The phenomenology of the radiation damage is analyzed as a function of the accumulated radiation dose and the time. The chronology of the phenomena which takes place in the oxide and the radiation transient phases in MOS structures are discussed. The equivalence of different radiations on SiO2 and other semiconductors is analyzed. The models applied to the study of the radiation permanent effects are reviewed

Availability note (English)

MF available from INIS under the Report Number.

Abstract (French)

Les effets d'une radiation ionisante sur la structure et le fonctionnement d'un semiconducteur de type metal-oxyde (MOS) sont etudies. La phenomenologie des degradations est analysee en fonction de la dose accumulee et du facteur temps. On etudie, egalement, la chronologie des phenomenes dans l'oxyde et les phases transitoires de l'irradiation dans les structures MOS. L'equivalence des rayonnements est analysee dans le SiO2 et dans d'autres semiconducteurs. Les modeles appliques a l'etude des effets permanents sont rappeles

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Additional details

Additional titles

Original title (French)
Structures a effet de champ de type MOS en irradiation: effet de la dose de rayonnements

Publishing Information

Imprint Pagination
97 p.
Report number
CEA-CONF--10107

Conference

Title
RADECS Congress.
Dates
11-14 Sep 1989.
Place
Montpellier (France).

INIS

Country of Publication
France
Country of Input or Organization
France
INIS RN
22018673
Subject category
S36: MATERIALS SCIENCE; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
HOLES; IONIZATION; MATHEMATICAL MODELS; MOS TRANSISTORS; POINT DEFECTS; RADIATION DOSES; RADIATION FLUX; RADIATION HARDENING; SEMICONDUCTOR MATERIALS; SILICON DIODES; SILICON OXIDES; TRANSIENTS
Descriptors DEC
CHALCOGENIDES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; HARDENING; MATERIALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL RADIATION EFFECTS; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SILICON COMPOUNDS; TRANSISTORS