Junctions made using p-CdTe films grown with ion-assisted doping

The reported work is part of the continuing study of p-CdTe thin films grown by ion-assisted doping during vacuum evaporation. Ion-assisted doping has clearly demonstrated an ability to control the carrier density in p-CdTe. The authors report results from In/p-CdTe Schottky barriers and from n-CdS/p-CdTe heterojunctions prepared with a systematic variation in the p-CdTe carrier density. The ion-assisted doping process itself appears to be responsible for a decrease in the Jsc through a reduction in the minority carrier lifetime and in the interface collection function h(0). Jsc increased through the use of a two-layer CdTe structure in which undoped CdTe is the CdS/CdTe interface