Published March 1, 2018
| Version v1
Journal article
Width-tunable pulse laser via optical injection induced gain modulation of semiconductor optical amplifiers
- 1. Key Laboratory of Film Electronics and Communication Devices, School of Electrical and Electronic Engineering, Tianjin University of Technology, Tianjin 300384 (China)
Description
A width-tunable pulse laser via an optical injection induced gain modulation of a semiconductor optical amplifier (SOA) is demonstrated. When the pump current of the SOA is 330 mA or 400 mA and a continuous wave is injected into the laser cavity with different powers, bright or dark pulses with different pulse widths and frequency repetition rates are obtained. The bright and dark pulses are formed by the effect of gain dispersion and cross-gain modulation of the SOA. (letter)
Availability note (English)
Available from http://dx.doi.org/10.1088/1612-202X/aa8ae6Additional details
Identifiers
Publishing Information
- Journal Title
- Laser Physics Letters (Internet)
- Journal Volume
- 15
- Journal Issue
- 3
- Journal Page Range
- [5 p.]
- ISSN
- 1612-202X
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 52027789
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- AMPLIFIERS; GAIN; LASER CAVITIES; LASERS; LINE WIDTHS; MODULATION; PULSES; SEMICONDUCTOR MATERIALS
- Descriptors DEC
- AMPLIFICATION; ELECTRONIC EQUIPMENT; EQUIPMENT; MATERIALS