Published March 1, 2018 | Version v1
Journal article

Width-tunable pulse laser via optical injection induced gain modulation of semiconductor optical amplifiers

  • 1. Key Laboratory of Film Electronics and Communication Devices, School of Electrical and Electronic Engineering, Tianjin University of Technology, Tianjin 300384 (China)

Description

A width-tunable pulse laser via an optical injection induced gain modulation of a semiconductor optical amplifier (SOA) is demonstrated. When the pump current of the SOA is 330 mA or 400 mA and a continuous wave is injected into the laser cavity with different powers, bright or dark pulses with different pulse widths and frequency repetition rates are obtained. The bright and dark pulses are formed by the effect of gain dispersion and cross-gain modulation of the SOA. (letter)

Availability note (English)

Available from http://dx.doi.org/10.1088/1612-202X/aa8ae6

Additional details

Identifiers

Publishing Information

Journal Title
Laser Physics Letters (Internet)
Journal Volume
15
Journal Issue
3
Journal Page Range
[5 p.]
ISSN
1612-202X

INIS

Country of Publication
Germany
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
52027789
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
AMPLIFIERS; GAIN; LASER CAVITIES; LASERS; LINE WIDTHS; MODULATION; PULSES; SEMICONDUCTOR MATERIALS
Descriptors DEC
AMPLIFICATION; ELECTRONIC EQUIPMENT; EQUIPMENT; MATERIALS