Characterization of sulfur-doped TiO2 films by RBS/C

Sulfur-doped titanium dioxide (TiO2) films have been deposited on α-Al2O3(0 0 0 1) and Si(1 0 0) substrates by pulsed laser deposition (PLD). To investigate growth condition of sulfur-doped TiO2 films, the various concentration of sulfur in titanium dioxide targets was prepared by annealing titanium disulfide (TiS2) in air up to 400 deg. C. The crystal structure of films and the concentration of doped sulfur were assessed by X-ray diffraction (XRD) and Rutherford backscattering spectroscopy with channeling (RBS/C). It was found that the concentration of sulfur in rutile TiO2 films was mainly influenced by the substrate temperature. Rutile TiO2(1 0 0) films contained a few atomic percent sulfur were obtained on α-Al2O3(0 0 0 1) at 400 deg. C substrate temperature using an annealed titanium disulfide target. RBS/C analysis showed that doped sulfur atoms in rutile TiO2(1 0 0) films were distributed randomly