Published March 1, 2019 | Version v1
Journal article

WS2/BSe van der Waals type-II heterostructure as a promising water splitting photocatalyst

  • 1. Henan Key Laboratory of Photovoltaic Materials, and School of Physics and Materials Science, Henan Normal University, Xinxiang 453007 (China)
  • 2. Tribology Research Institute, State Key Laboratory of Traction Power, Southwest Jiaotong University, Chengdu 610031 (China)

Description

The structure, electronic properties, charge transfer, band edge alignments and optical properties of WS2/BSe heterostructures are investigated by using first-principle calculations. Results imply that WS2/BSe heterostructures are semiconductor with an indirect energy gap (Egap) of 1.73 eV. Additionally, it has a feature of type-II band alignment, which contributes to spatial separation of photo-generated electron-hole pairs in WS2/BSe heterostructures. Charge transfer takes place from BSe to WS2 monolayers, which extends lifetime of the separated photo-induced charge carriers. Most importantly, band edges of the heterostructure are found to meet hydrogen evolution reaction (HER) in acid solutions (0 < pH < 7). Moreover, compared with only one for WS2 and BSe monolayers, the optical-absorption strength of the heterostructure is significantly enhanced and WS2/BSe heterostructures larges the range of absorption to 717 nm in the visible light region, improving the potential photocatalytic efficiency. These results explain the underlying mechanism of the enhanced photocatalytic activity of WS2/BSe heterostructures. Thus WS2/BSe heterostructures can be applied to 2D heterostructured photocatalysts. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/2053-1591/aaf7c3

Additional details

Identifiers

Publishing Information

Journal Title
Materials Research Express (Online)
Journal Volume
6
Journal Issue
3
Journal Page Range
[6 p.]
ISSN
2053-1591

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
51103694
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CATALYSTS; CHARGE CARRIERS; ENERGY GAP; HYDROGEN PRODUCTION; OPTICAL PROPERTIES; SEMICONDUCTOR MATERIALS; TUNGSTEN SULFIDES; VAN DER WAALS FORCES
Descriptors DEC
CHALCOGENIDES; MATERIALS; PHYSICAL PROPERTIES; REFRACTORY METAL COMPOUNDS; SULFIDES; SULFUR COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; TUNGSTEN COMPOUNDS