Crack resistance of semiconductor materials on example of p-PbTe

The possibility of crack propagation prevention was studied using as an example a semiconductor material (p-PbTe). Their influence on the main electrophysical parameters is ascertained. The problem of finding a method for the assessment of crack resistance by the change in electric properties is set up. Development of composition systems and traps promotes an increase in the semiconductor materials can be realized by annealing. Ratios of specific electric conductivity - charge carrier mobility prior to and after thermocycling are one of the features of crack resistance