Published November 1, 2018 | Version v1
Journal article

InAs-based interband cascade lasers at 4.0 μm operating at room temperature

  • 1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083 (China)

Description

InAs-based interband cascade lasers (ICLs) with InAs plasmon waveguides or InAs/AlSb superlattice (SL) waveguides were demonstrated at emission wavelengths below 4.1 μm. The threshold current densities of the lasers with SL waveguides were 37 A/cm2 at 77 K in continuous wave mode. The operation temperature of these lasers reached room temperature in pulsed mode. Compared with the thick InAs n++ plasmon cladding layer, the InAs/AlSb superlattice cladding layers have greater advantages for ICLs with wavelengths less than 4 μm even in InAs based ICLs because in the short-wavelength region they have a higher confinement factor than InAs plasmon waveguides. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-4926/39/11/114003

Additional details

Publishing Information

Journal Title
Journal of Semiconductors
Journal Volume
39
Journal Issue
11
Journal Page Range
[4 p.]
ISSN
1674-4926

INIS

Country of Publication
China
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
51067358
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CLADDING; CURRENT DENSITY; INDIUM ARSENIDES; LASERS; LAYERS; PLASMONS; PULSES; SUPERLATTICES; TEMPERATURE RANGE 0273-0400 K; THRESHOLD CURRENT; WAVEGUIDES; WAVELENGTHS
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CURRENTS; DEPOSITION; ELECTRIC CURRENTS; INDIUM COMPOUNDS; PNICTIDES; QUASI PARTICLES; SURFACE COATING; TEMPERATURE RANGE