Published November 1, 2018
| Version v1
Journal article
InAs-based interband cascade lasers at 4.0 μm operating at room temperature
Creators
- 1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083 (China)
Description
InAs-based interband cascade lasers (ICLs) with InAs plasmon waveguides or InAs/AlSb superlattice (SL) waveguides were demonstrated at emission wavelengths below 4.1 μm. The threshold current densities of the lasers with SL waveguides were 37 A/cm2 at 77 K in continuous wave mode. The operation temperature of these lasers reached room temperature in pulsed mode. Compared with the thick InAs n++ plasmon cladding layer, the InAs/AlSb superlattice cladding layers have greater advantages for ICLs with wavelengths less than 4 μm even in InAs based ICLs because in the short-wavelength region they have a higher confinement factor than InAs plasmon waveguides. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1674-4926/39/11/114003Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Semiconductors
- Journal Volume
- 39
- Journal Issue
- 11
- Journal Page Range
- [4 p.]
- ISSN
- 1674-4926
INIS
- Country of Publication
- China
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 51067358
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CLADDING; CURRENT DENSITY; INDIUM ARSENIDES; LASERS; LAYERS; PLASMONS; PULSES; SUPERLATTICES; TEMPERATURE RANGE 0273-0400 K; THRESHOLD CURRENT; WAVEGUIDES; WAVELENGTHS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CURRENTS; DEPOSITION; ELECTRIC CURRENTS; INDIUM COMPOUNDS; PNICTIDES; QUASI PARTICLES; SURFACE COATING; TEMPERATURE RANGE