Published January 2004
| Version v1
Journal article
Influence of the doping concentration of YBa2Cu3O7-δ drain-source channels on the properties of superconducting field-effect devices
- 1. Experimentalphysik VI, Elektronische Korrelationen und Magnetismus, Institut fuer Physik, Universitaet Augsburg, 86135 Augsburg (Germany)
- 2. Correlated Electron Research Center (CERC), National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8562 (Japan)
Description
Systematic electric-field-effect studies of the charge transport in doped YBa2Cu3O7-δ films were conducted. The results verify that the superconducting properties of YBa2Cu3O7-δ can be controlled by electric fields, as predicted by the generic phase diagram of the cuprates. (Abstract Copyright [2004], Wiley Periodicals, Inc.)
Availability note (English)
Available from: http://dx.doi.org/10.1002/andp.200310049Additional details
Identifiers
Publishing Information
- Journal Title
- Annalen der Physik (Leipzig)
- Journal Volume
- 13
- Journal Issue
- 1-2
- Journal Page Range
- p. 66-67
- ISSN
- 0003-3804
Conference
- Title
- 10. international workshop on oxide electronics
- Acronym
- WOE 10
- Dates
- 11-13 Sep 2003
- Place
- Augsburg (Germany)
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 35034782
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BARIUM COMPOUNDS; CUPRATES; DOPED MATERIALS; ELECTRIC FIELDS; FIELD EFFECT TRANSISTORS; HIGH-TC SUPERCONDUCTORS; SUPERCONDUCTING DEVICES; SUPERCONDUCTING JUNCTIONS; SUPERCONDUCTIVITY; YTTRIUM COMPOUNDS
- Descriptors DEC
- ALKALINE EARTH METAL COMPOUNDS; COPPER COMPOUNDS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; MATERIALS; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; SUPERCONDUCTORS; TRANSISTORS; TRANSITION ELEMENT COMPOUNDS; TYPE-II SUPERCONDUCTORS
Optional Information
- Notes
- 1 fig., 5 refs.. SICI: 0003-3804(20040129)13:1/2<66::AID-ANDP200310049>3.0.TX;2-M