Published May 2007
| Version v1
Journal article
EPR and photoacoustic studies on 30 kev H+ ion-implanted n-GaAs
Creators
- 1. Department of Physics, Thiagarajar College, Madurai 625 009 (India)
- 2. School of Physics, Madurai Kamaraj University, Madurai 625 021 (India)
Description
Electron paramagnetic resonance (EPR) measurements are carried out on the 30 keV H+ion-implanted, Si-doped GaAs(1 0 0) for various doses from 1014 to 1017 cm-2. The results are correlated with photoacoustic and photoluminescence measurements. All the measurements confirm the sign change of charge carrier at a dose of 1015 cm-2
Additional details
Identifiers
- DOI
- 10.1016/j.jlumin.2006.01.358;
- PII
- S0022-2313(06)00365-6;
Publishing Information
- Journal Title
- Journal of Luminescence
- Journal Volume
- 124
- Journal Issue
- 1
- Journal Page Range
- p. 28-32
- ISSN
- 0022-2313
- CODEN
- JLUMA8
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38037184
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CHARGE CARRIERS; DOPED MATERIALS; ELECTRON SPIN RESONANCE; GALLIUM ARSENIDES; HYDROGEN IONS 1 PLUS; IMPURITIES; ION IMPLANTATION; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CATIONS; CHARGED PARTICLES; EMISSION; GALLIUM COMPOUNDS; HYDROGEN IONS; IONS; LUMINESCENCE; MAGNETIC RESONANCE; MATERIALS; PHOTON EMISSION; PNICTIDES; RESONANCE
Optional Information
- Copyright
- Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.