Thermodynamics of donor-acceptor interaction in semiconductors. 1. Solubility and donor-acceptor interaction during double alloying

Semiconductor double alloying principles are considered. Data on separate and simultaneous donor and acceptor solubility in germanium, silicon and A3B5 compounds are systematized and the effect of their mutual influence on solubility value during the corresponding solid solution formation which is connected with the manifestation of donor-acceptor interaction, accompanied by (DA)0 complex formation, is marked. The thermodynamic analysis of donor-acceptor interaction reactions is given. Based on data on simultaneous donor and acceptor solubility in semiconductors under Ge(Si)-A3-B5 and A3B5-A2-B6 system considering donor-acceptor interaction reaction equilibrium constants are calculated at different temperatures, where A3-Al, Ga, In; B5-P, As, Sb; A2-Zn, Cd,Hg; B6-S, Se, Te. Based on the obtained constant temperature dependence the donor-acceptor (DA)0 complex formation heats are calculated. The data obtained are compared with thestandard heats of the corresponding A3B5 and A2B6 compound formation. The presence of distinct correlation between themis shown