Published April 2021 | Version v1
Journal article

Synthesis of magnetocaloric Mn5-xFexSi3 (2.5≤x≤4.0) compounds and the influence of various sintering atmospheres on the magnetic and electrical properties

  • 1. Section of Solid-State Physics, Department of Physics, National and Kapodistrian University of Athens, Panepistimioupolis Zografos, Athens, 15784 (Greece)

Description

Highlights: • Polycrystalline Mn5-xFexSi3 (x=2.5, 3.0, 3.5, 4.0) compounds synthesized by solid state reaction method. • Samples were sintered under High Vacuum (HV) conditions as well as under Ar-4%H2 conditions. • The electrical resistivity in the range 18–915K is metallic for all x and almost temperature independent at T≥300K. • The samples sintered under Ar-4%H2 showed a strong enhancement of ac-magnetic susceptibility and improved densification. Polycrystalline powders of Mn5-xFexSi3 (x=2.5, 3.0, 3.5, 4.0) compounds (Mn5Si3-type, space group P63/mcm, No. 193) were prepared by solid state reaction of pure Mn, Fe and Si powders under High Vacuum (HV) conditions at T=1000°C. Samples were sintered at T=1100°C under HV as well as under Ar-4%H2 conditions. X-ray Diffraction (XRD) analysis revealed that the compounds crystallize with hexagonal symmetry in accordance with previous reports. The χac susceptibility measurements for the samples sintered under HV conditions show systematic strengthening of the ferromagnetic (FM) state upon increasing x. The electrical resistivity, ρ, remains metallic for all x, with a very weak temperature dependence at T>300K. At T2 atmosphere, the electrical properties are similar to those of the samples sintered under HV, while a strong enhancement of χac was observed.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.jssc.2021.121980

Additional details

Identifiers

DOI
10.1016/j.jssc.2021.121980;
PII
S0022459621000256;

Publishing Information

Journal Title
Journal of Solid State Chemistry (Print)
Journal Volume
296
Journal Page Range
vp.
ISSN
0022-4596
CODEN
JSSCBI

Optional Information

Copyright
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