Clusters formed in laser-induced ablation of Si, SiC, Pt, UO2 and evaporation of UO2 observed by laser ionization time-of-flight mass spectrometry and scanning tunneling microscopy
Creators
- 1. Lawrence Livermore National Lab., Livermore, CA (United States)
- 2. Univ. of California, Berkeley (United States)
Description
Cluster formation is traditionally observed by mass spectrometry, which has the disadvantage that the detection sensitivity often decreases with increasing mass. Alternatively, one may collect the clusters onto an atomically flat substrate and identify them by scanning tunneling microscopy (STM). Both techniques were used here. For the first technique, a Nd:YAG laser (frequency quadrupled to 266 nm, 5 ns pulse width) focused onto spots of 4-100 μ diameter was used to ablate refractory materials, and a reflectron time-of-flight tube served to mass-analyze the plumes. The observed mass spectra for Si, Pt, SiC, and UO2 varied in the distribution of ablation products among atoms, molecules, and clusters, depending on laser power density and target material. For the second technique, cleaved surfaces of highly oriented pyrolytic graphite were positioned either 10 cm away from materials ablated at 10-8 Torr by 1-3 excimer laser (308 nm) pulses of 20 ns duration, or 1 m away from materials vaporized at 10-8 Torr by 10 Nd:Glass laser pulses of 1 ms duration. The deposited material was then analyzed by STM in air. Clusters up to 30 angstrom in diameter were observed for all materials, making the use of STM at room temperature for mass analysis questionable
Additional details
Publishing Information
- Journal Title
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena
- Journal Volume
- 9
- Journal Issue
- 2
- Series
- J. Vac. Sci. Technol., B Microelectron. Process. Phenom.
- Journal Page Range
- 820-824
- ISSN
- 0734-211X
- CODEN
- JVTBD
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 23070667
- Subject category
- S36: MATERIALS SCIENCE; S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; S22: GENERAL STUDIES OF NUCLEAR REACTORS;
- Descriptors DEI
- ABLATION; GRAPHITE; LASER SPECTROSCOPY; MASS SPECTRA; MICROSCOPY; MINING; PLATINUM; REFRACTORIES; SILICON; SILICON CARBIDES; SUBSTRATES; URANIUM DIOXIDE
- Descriptors DEC
- ACTINIDE COMPOUNDS; CARBIDES; CARBON; CARBON COMPOUNDS; CHALCOGENIDES; ELEMENTS; METALS; NONMETALS; OXIDES; OXYGEN COMPOUNDS; PLATINUM METALS; SEMIMETALS; SILICON COMPOUNDS; SPECTRA; SPECTROSCOPY; TRANSITION ELEMENTS; URANIUM COMPOUNDS; URANIUM OXIDES