Published 1998
| Version v1
Miscellaneous
Partially strained Si1-xGex/Si structures investigated by photoreflectance spectroscopy
Creators
- 1. Institute of Physics, Wroclaw University of Technology, Wroclaw (Poland)
- 2. Hewlett Packard Laboratories, Palo Alto (United States)
Description
no abstract available
Additional details
Additional titles
- Augmented title (English)
- thin films
Publishing Information
- ISBN
- 83-901181-0-6
- Imprint Title
- Abstracts of International Conference on Solid State Crystals - Materials Science and Applications
- Imprint Pagination
- 268 p.
- Journal Page Range
- p. 197
Conference
- Title
- International Conference on Solid State Crystals - Materials Science and Applications
- Dates
- 12-16 Oct 1998
- Place
- Zakopane (Poland)
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 31044466
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract, Conference, Non-conventional Literature
- Descriptors DEI
- CHEMICAL VAPOR DEPOSITION; GERMANIUM ALLOYS; HETEROJUNCTIONS; MEETINGS; MOLECULAR BEAM EPITAXY; ORGANOMETALLIC COMPOUNDS; SILICON; SILICON ALLOYS; SPECTRAL REFLECTANCE; STRAINS; SUBSTRATES; THIN FILMS
- Descriptors DEC
- ALLOYS; CHEMICAL COATING; CRYSTAL GROWTH METHODS; DEPOSITION; ELEMENTS; EPITAXY; FILMS; OPTICAL PROPERTIES; ORGANIC COMPOUNDS; PHYSICAL PROPERTIES; SEMICONDUCTOR JUNCTIONS; SEMIMETALS; SURFACE COATING
Optional Information
- Notes
- 2 refs