Study of the gamma-irradiated effect on the nature of specific resistance distribution over the depth of phosphorus doped silicon epitaxial layers

Under prolonged (up to 24 hr) γ-irradiation, the epitaxial film-substrate electric interface shifted into the depth of the substrate. The effect of the irradiation on the specific electrical resistance (rho) of the films occurs within the first hr of irradiation at doses <1.08 x 107R. Rho increases with the irradiation dose, reaches a maximum, and then decreases to a constant value at doses >5.4 x 107 R. The results show the shift of the p-n transitions into the depth of the sample under the effect of the irradiation