Published December 8, 2014 | Version v1
Journal article

High-frequency ESR measurements and ESR/NMR double resonance experiments of lightly phosphorous-doped silicon

  • 1. Research Center for Development of Far-Infrared Region, University of Fukui, Fukui 910-8507,Japan (Japan)
  • 2. Department of Applied Physics, University of Fukui, Fukui 910-8507 (Japan)
  • 3. Division of Materials Science, Korea Basic Science Institute (KBSI), 169-148 Gwahak-ro, Yuseong-gu, Daejeon 305-806 (Korea, Republic of)
  • 4. Department of Physics, Hyogo College of Medicine, Nishinomiya 663-8501 (Japan)
  • 5. Research Center for Low Temperature and Materials Sciences, Kyoto University, Kyoto 606-8501 (Japan)
  • 6. Graduate School of Medicine, Kyoto University, Kyoto 606-8501 (Japan)
  • 7. Department of Physics, Korea Advanced Institute of Science and Technology, 291 Daehak-ro, Yuseong-gu, Daejeon 305-701 (Korea, Republic of)

Description

We studied lightly doped Si:P with high-frequency (80-120 GHz) ESR and ESR/NMR double magnetic resonance techniques in the temperature range down to 1.4 K. We found dynamic nuclear polarization of 31P from steady-state ESR measurements with approximately 3.6 T. We derived the nuclear spin relaxation time, T1N, of 31P by analysing the time-evolution of ESR spectra utilizing the dynamic nuclear polarization effect. We derive temperature and magnetic field dependence of T1N and compare with experimental data. Furthermore, from our ESR measurements, we modulate the nuclear polarization of 31P by applying an RF field

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/568/4/042005

Additional details

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
568
Journal Issue
4
Journal Page Range
[5 p.]
ISSN
1742-6596

Conference

Title
27. International Conference on Low Temperature Physics
Acronym
LT27
Dates
6-13 Aug 2014
Place
Buenos Aires (Argentina)