Projected range and straggling measurements of low energy nitrogen in silicon

The projected ranges and straggling of 0.25 to 2.5 keV nitrogen atoms in silicon were determined by means of Auger electron spectroscopy combined with argon sputter depth profiling. The results show excellent correspondence with experimental measurements of other ions in silicon. However a considerable discrepancy exists between various theoretical predictions and the measured projected ranges. This discrepancy is attributed to inaccuracies in the theories in the low energy region. (author)