Published 1989 | Version v1
Miscellaneous

Effects of carbon on defect formation in czochralski silicon

  • 1. Goias Univ., Goiania, GO (Brazil). Dept. de Fisica
  • 2. Sao Paulo Univ., SP (Brazil). Inst. de Fisica

Description

Published in summary form only

Availability note (English)

Available from the Library of Comissao Nacional de Energia Nuclear, RJ, Brazil.

Additional details

Additional titles

Original title (Portuguese)
Efeitos do carbono na formacao de defeitos no silicio czochralski

Publishing Information

Imprint Title
Proceedings of the 12. National Meeting on Condensed Matter Physics
Imprint Pagination
301 p.
Journal Page Range
p. 243.

Conference

Title
12. National Meeting on Condensed Matter Physics.
Dates
9-13 May 1989.
Place
Caxambu, MG (Brazil).

INIS

Country of Publication
Brazil
Country of Input or Organization
Brazil
INIS RN
20070393
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference, No Abstract, Non-conventional Literature
Descriptors DEI
CARBON; CRYSTAL DEFECTS; CZOCHRALSKI METHOD; ELECTRON MICROSCOPY; HEAT TREATMENTS; IMPURITIES; PHOTOLUMINESCENCE; SILICON; X-RAY DIFFRACTION
Descriptors DEC
COHERENT SCATTERING; CRYSTAL STRUCTURE; DIFFRACTION; ELEMENTS; EMISSION; LUMINESCENCE; MICROSCOPY; NONMETALS; PHOTON EMISSION; SCATTERING; SEMIMETALS

Optional Information

Notes
Imprint:Anais do 12. Encontro Nacional de Fisica da Materia Condensada.