Published 1989
| Version v1
Miscellaneous
Effects of carbon on defect formation in czochralski silicon
Creators
- 1. Goias Univ., Goiania, GO (Brazil). Dept. de Fisica
- 2. Sao Paulo Univ., SP (Brazil). Inst. de Fisica
Description
Published in summary form only
Availability note (English)
Available from the Library of Comissao Nacional de Energia Nuclear, RJ, Brazil.Additional details
Additional titles
- Original title (Portuguese)
- Efeitos do carbono na formacao de defeitos no silicio czochralski
Publishing Information
- Imprint Title
- Proceedings of the 12. National Meeting on Condensed Matter Physics
- Imprint Pagination
- 301 p.
- Journal Page Range
- p. 243.
Conference
- Title
- 12. National Meeting on Condensed Matter Physics.
- Dates
- 9-13 May 1989.
- Place
- Caxambu, MG (Brazil).
INIS
- Country of Publication
- Brazil
- Country of Input or Organization
- Brazil
- INIS RN
- 20070393
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract, Non-conventional Literature
- Descriptors DEI
- CARBON; CRYSTAL DEFECTS; CZOCHRALSKI METHOD; ELECTRON MICROSCOPY; HEAT TREATMENTS; IMPURITIES; PHOTOLUMINESCENCE; SILICON; X-RAY DIFFRACTION
- Descriptors DEC
- COHERENT SCATTERING; CRYSTAL STRUCTURE; DIFFRACTION; ELEMENTS; EMISSION; LUMINESCENCE; MICROSCOPY; NONMETALS; PHOTON EMISSION; SCATTERING; SEMIMETALS
Optional Information
- Notes
- Imprint:Anais do 12. Encontro Nacional de Fisica da Materia Condensada.