Investigation of the surface of implanted silicon crystal by the contact angle

The authors study the dependence of the critical contact angle of silicon upon the dose of its irradiation by argon and boron ions. It is established that the system of immiscible liquids ether-water can be successfully used to study the influence of ion implantation of silicon on its wettability by water. The change in the wettability of implanted silicon is related to the increase in the level of the defect state of the layer surface. Wetting of implanted silicon by melts at high temperatures can be used for studying the kinetics and the annealing mechanism of defects