Published December 3, 2012 | Version v1
Journal article

Chemical and structural investigations of the incorporation of metal manganese into ruthenium thin films for use as copper diffusion barrier layers

  • 1. School of Physical Sciences, Dublin City University, Dublin 9 (Ireland)
  • 2. Department of Materials, University of Oxford, Oxford OX1 3PH (United Kingdom)

Description

The incorporation of manganese into a 3 nm ruthenium thin-film is presented as a potential mechanism to improve its performance as a copper diffusion barrier. Manganese (∼1 nm) was deposited on an atomic layer deposited Ru film, and the Mn/Ru/SiO2 structure was subsequently thermally annealed. X-ray photoelectron spectroscopy studies reveal the chemical interaction of Mn with the SiO2 substrate to form manganese-silicate (MnSiO3), implying the migration of the metal through the Ru film. Electron energy loss spectroscopy line profile measurements of the intensity of the Mn signal across the Ru film confirm the presence of Mn at the Ru/SiO2 interface.

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
101
Journal Issue
23
Journal Page Range
p. 231603-231603.4
ISSN
0003-6951
CODEN
APPLAB

Optional Information

Notes
(c) 2012 American Institute of Physics