Published August 2009
| Version v1
Journal article
Isotopic labeling study of oxygen diffusion in amorphous LaScO3 high-κ films on Si(100) and its effects on the electrical characteristics
Creators
- 1. JARA-Fundamentals of Future Information Technologies, Juelich (Germany)
- 2. Research Center Juelich, Institute for Bio- and Nanosystems IBN1-IT, Juelich (Germany)
- 3. Research Center Juelich, Central Division of Analytical Chemistry (ZCH), Juelich (Germany)
- 4. UFRGS, Institute of Physics, Porto Alegre (Brazil)
- 5. UFRGS, Institute of Chemistry, Porto Alegre (Brazil)
Description
The influence of post-deposition oxygen anneals on the properties of amorphous LaScO3 films on Si(100) is reported. The use of an isotopically (18O2) enriched atmosphere allowed to investigate the 16O-18O exchange and the oxygen diffusion across the dielectric layer. Such effects are connected to the formation of an interfacial layer. Oxygen annealing leads to nearly ideal capacitance-voltage curves, lower leakage currents and interface trap densities, as well as to κ-values up to 33 for the LaScO3 films. These results are attributed to the suppression of oxygen-related trap centers and the achievement of a stoichiometric oxygen content. (orig.)
Availability note (English)
Available from: http://dx.doi.org/10.1007/s00339-009-5153-yAdditional details
Identifiers
Publishing Information
- Journal Title
- Applied Physics. A, Materials Science and Processing
- Journal Volume
- 96
- Journal Issue
- 2
- Series
- Special Issue: ''1st Julius Springer Forum on Applied Physics'' at Harvard (pp 271-402)
- Journal Page Range
- p. 447-451
- ISSN
- 0947-8396
- CODEN
- APAMFC
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 40077219
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- AMORPHOUS STATE; ANNEALING; CAPACITANCE; DIELECTRIC MATERIALS; DIFFUSION; FILMS; INTERFACES; LANTHANUM OXIDES; LAYERS; OXYGEN IONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SAMARIUM OXIDES; SELF-DIFFUSION; SUBSTRATES; SURFACES; THICKNESS; TRANSMISSION ELECTRON MICROSCOPY; TRAPS
- Descriptors DEC
- CHALCOGENIDES; CHARGED PARTICLES; DIFFUSION; DIMENSIONS; ELECTRICAL PROPERTIES; ELECTRON MICROSCOPY; HEAT TREATMENTS; IONS; LANTHANUM COMPOUNDS; MATERIALS; MICROSCOPY; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RARE EARTH COMPOUNDS; SAMARIUM COMPOUNDS; SPECTROSCOPY