Published August 2009 | Version v1
Journal article

Isotopic labeling study of oxygen diffusion in amorphous LaScO3 high-κ films on Si(100) and its effects on the electrical characteristics

  • 1. JARA-Fundamentals of Future Information Technologies, Juelich (Germany)
  • 2. Research Center Juelich, Institute for Bio- and Nanosystems IBN1-IT, Juelich (Germany)
  • 3. Research Center Juelich, Central Division of Analytical Chemistry (ZCH), Juelich (Germany)
  • 4. UFRGS, Institute of Physics, Porto Alegre (Brazil)
  • 5. UFRGS, Institute of Chemistry, Porto Alegre (Brazil)

Description

The influence of post-deposition oxygen anneals on the properties of amorphous LaScO3 films on Si(100) is reported. The use of an isotopically (18O2) enriched atmosphere allowed to investigate the 16O-18O exchange and the oxygen diffusion across the dielectric layer. Such effects are connected to the formation of an interfacial layer. Oxygen annealing leads to nearly ideal capacitance-voltage curves, lower leakage currents and interface trap densities, as well as to κ-values up to 33 for the LaScO3 films. These results are attributed to the suppression of oxygen-related trap centers and the achievement of a stoichiometric oxygen content. (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1007/s00339-009-5153-y

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics. A, Materials Science and Processing
Journal Volume
96
Journal Issue
2
Series
Special Issue: ''1st Julius Springer Forum on Applied Physics'' at Harvard (pp 271-402)
Journal Page Range
p. 447-451
ISSN
0947-8396
CODEN
APAMFC