Published May 7, 2015
| Version v1
Journal article
Quantum anomalous Hall effect in topological insulator memory
- 1. Data Storage Institute, Agency for Science, Technology and Research A*STAR, DSI Building, 5 Engineering Drive 1, Singapore, Singapore 117608 (Singapore)
- 2. Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, Singapore 117576 (Singapore)
- 3. NUS Graduate School for Integrative Sciences and Engineering, National University of Singapore (Singapore)
Description
We theoretically investigate the quantum anomalous Hall effect (QAHE) in a magnetically coupled three-dimensional-topological insulator (3D-TI) system. We apply the generalized spin-orbit coupling Hamiltonian to obtain the Hall conductivity σxy of the system. The underlying topology of the QAHE phenomenon is then analyzed to show the quantization of σxy and its relation to the Berry phase of the system. Finally, we analyze the feasibility of utilizing σxy as a memory read-out in a 3D-TI based memory at finite temperatures, with comparison to known magnetically doped 3D-TIs
Additional details
Identifiers
- DOI
- 10.1063/1.4916999;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 117
- Journal Issue
- 17
- Journal Page Range
- vp.
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46115901
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- COMPARATIVE EVALUATIONS; DOPED MATERIALS; HALL EFFECT; HAMILTONIANS; L-S COUPLING; QUANTIZATION; READOUT SYSTEMS; THREE-DIMENSIONAL CALCULATIONS; THREE-DIMENSIONAL LATTICES; TOPOLOGY
- Descriptors DEC
- COUPLING; CRYSTAL LATTICES; CRYSTAL STRUCTURE; EVALUATION; INTERMEDIATE COUPLING; MATERIALS; MATHEMATICAL OPERATORS; MATHEMATICS; QUANTUM OPERATORS
Optional Information
- Notes
- (c) 2015 AIP Publishing LLC