Published September 28, 1981
| Version v1
Journal article
X-ray attenuation coefficients and atomic photoelectric absorption cross sections of silicon
Description
The x-ray linear attenuation coefficient of single-crystal silicon has been measured to within 0.5% using an energy dispersive method. Atomic photoelectric cross sections are derived from the experimental results and compared with theoretical calculations. Results are given for the Cu and Mo K lines. (author)
Additional details
Publishing Information
- Journal Title
- J. Phys., B (London). At. Mol. Phys.
- Journal Volume
- 14
- Journal Issue
- 18
- Series
- J. Phys., B (London). At. Mol. Phys.
- Journal Page Range
- 3389-3395
- ISSN
- 0022-3700
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 13646067
- Subject category
- S74: ATOMIC AND MOLECULAR PHYSICS;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- ABSORPTION; ATTENUATION; COPPER; DISPERSION RELATIONS; EXPERIMENTAL DATA; K SHELL; MOLYBDENUM; MONOCRYSTALS; PHOTOELECTRIC EFFECT; SILICON; TOTAL CROSS SECTIONS; X RADIATION
- Descriptors DEC
- CROSS SECTIONS; CRYSTALS; DATA; ELECTROMAGNETIC RADIATION; ELECTRONIC STRUCTURE; ELEMENTS; INFORMATION; IONIZING RADIATIONS; METALS; NUMERICAL DATA; RADIATIONS; SEMIMETALS; TRANSITION ELEMENTS