Published 2003
| Version v1
Journal article
Shallow localized states in CdS thin layers by conductivity and Hall effect measurements
Creators
- 1. University of Cluj-Napoca, 1 Kogalniceanu Sq, RO-3400 Cluj-Napoca (RO)
- 2. National Institute for Research and Development of Isotopic and Molecular Technologies, 65-103 Donath St., PO Box 700, RO-400293, Cluj-Napoca (RO)
Description
Electric conductivity and Hall coefficient of high quality CdS thin films has been measured, in the temperature range between 177 K and 370 K, using Van der Pauw method. We have found that there are present at least two types of localized centers in this material, one of which find itself both in ground and first excited state. The nature and the energy of these localized centers and the probably dominating scattering mechanisms of free carriers in different ranges of temperature have been established. (authors)
Additional details
Publishing Information
- Journal Title
- Romanian Journal of Physics
- Journal Volume
- 48
- Journal Issue
- 7-10
- Journal Page Range
- p. 915-919
- ISSN
- 1221-146X
INIS
- Country of Publication
- Romania
- Country of Input or Organization
- Romania
- INIS RN
- 35061999
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CADMIUM SULFIDES; ELECTRIC CONDUCTIVITY; HALL EFFECT; TEMPERATURE DEPENDENCE; THIN FILMS
- Descriptors DEC
- CADMIUM COMPOUNDS; CHALCOGENIDES; ELECTRICAL PROPERTIES; FILMS; INORGANIC PHOSPHORS; PHOSPHORS; PHYSICAL PROPERTIES; SULFIDES; SULFUR COMPOUNDS
Optional Information
- Notes
- 5 refs., 4 figs.