Optical properties of non-crystalline materials. II. Fundamental absorption edge, luminescence, states in the gap and photoconductivity
Description
Non-crystalline materials contain defects in the form of dangling bonds and unusual chemical bonding arrangements, in addition to impurities, vacancies, voids etc. An understanding of these defects is important for the interpretation of several optical properties, e.g. those associated with the fundamental absorption edge, luminescence and photoconductivity. A recent model for certain types of defects in chalcogenide glasses are described in some detail and shown to account for many experimental results. Even in the absence of specific defects, the nature of the electron states, particularly near band edges, differs from that in crystals: in the absence of long range order the states become localized, leading to the concepts of mobility edges and hopping conduction. Bond angle distortions and internal microfields also affect band edges and the fundamental absorption edge of several materials are described and discussed with reference to these. (author)
Additional details
Publishing Information
- Publisher
- IAEA.
- Imprint Place
- Vienna
- ISBN
- 92-0-130477-3
- Imprint Title
- Interaction of radiation with condensed matter
- Journal Page Range
- v. 2 p. 141-157.
Conference
- Title
- International winter college on interaction of radiation with condensed matter.
- Dates
- 14 Jan - 26 Mar 1976.
- Place
- Trieste, Italy.
INIS
- Country of Publication
- International Atomic Energy Agency (IAEA)
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 8341556
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ABSORPTION; AMORPHOUS STATE; ARSENIC; ARSENIC COMPOUNDS; CHALCOGENIDES; CHEMICAL BONDS; ELECTRONS; ENERGY DEPENDENCE; ENERGY-LEVEL DENSITY; EXCITATION; GERMANIUM; HOLES; OPTICAL PROPERTIES; PHOTOCONDUCTIVITY; PHOTOLUMINESCENCE; RECOMBINATION; SELENIUM; SEMICONDUCTOR MATERIALS; TELLURIUM; TEMPERATURE DEPENDENCE; VALENCE; VISIBLE RADIATION
- Descriptors DEC
- ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELEMENTARY PARTICLES; ELEMENTS; ENERGY-LEVEL TRANSITIONS; FERMIONS; LEPTONS; LUMINESCENCE; METALS; PHYSICAL PROPERTIES; RADIATIONS; SEMIMETALS
Optional Information
- Secondary number(s)
- IAEA-SMR--20/55.