Correlation of acoustic emission at the current loading of InGaN/GaN light-emitting diodes with changes of their luminescent and electrical characteristics

In the paper correlation of acoustic emission occurrence and changing luminescent and electrical characteristics of InGaN/GaN light emitting diodes have been revealed at loading a forward direct current that indicates their common mechanism of an origin. It is shown that the amount of acoustic emission sources in InGaN/GaN light emitting diodes at flowing of critical density of a direct current depends on temperature and considerably increases with growth of temperature. (authors)