Published January 2013
| Version v1
Journal article
Piezoresistance effect in PbTe microwires
Creators
- 1. Inst.of Electronic Engineering and Nanotechnology 'D. Gitsu', Academy of Sciences of Moldova, Academiei str. 3/3, MD 2028, Chisinau (Moldova, Republic of)
Description
In physics of narrow-gap semiconductors, much attention is paid to A4B6 semiconductors, because they can be used to prepare a broad class of microconverters of physical quantities into electric signals. The multiellipsoidal band structure makes it possible to design piezoelectric converters based on these materials. The technique of measuring the strain gauge factor K of a microwire (MW) is presented. (author)
Availability note (English)
Available online at http://sfm.asm.md/moldphys/2013/vol12/n12/index.htmlAdditional details
Identifiers
Publishing Information
- Journal Title
- Moldavian Journal of the Physical Sciences
- Journal Volume
- 12
- Journal Issue
- 1-2
- Journal Page Range
- p. 63-65
- ISSN
- 1810-648X
INIS
- Country of Publication
- Moldova, Republic of
- Country of Input or Organization
- Moldova, Republic of
- INIS RN
- 44115556
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- DC TO DC CONVERTERS; ELECTRIC CONDUCTIVITY; LEAD COMPOUNDS; LEAD TELLURIDES; PIEZOELECTRICITY; STRAINS; TELLURIDES; TELLURIUM COMPOUNDS; WIRES
- Descriptors DEC
- CHALCOGENIDES; ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; ELECTRICITY; EQUIPMENT; LEAD COMPOUNDS; PHYSICAL PROPERTIES; TELLURIDES; TELLURIUM COMPOUNDS
Optional Information
- Notes
- 6 refs., 1 fig.