Crystal structure and electrical properties of epitaxial BiFeO3 thin films grown by metal organic chemical vapor deposition

BiFeO3 thin films with various thicknesses were grown on (100)cSrRuO3 (100)SrTiO3 substrates at 620degC by metalorganic chemical vapor|| (100)SrTiO3 substrates at 620degC by metalorganic chemical vapor deposition (MOCVD) for the first time. X-ray diffraction analysis revealed cube-on-cube epitaxial growth of phase-pure BiFeO3 films with (001) orientation irrespective of the film thickness. Out-of-plane lattice parameter decreased with increasing the film thickness up to 100 nm, however this change with the film thickness became small above this thickness. The well saturated hysteresis loops with the remanent polarization and the coercive field values of 51 μC/cm2 and 166kV/cm, respectively were obtained at 80K up to 400kV/cm for the 480-nm-thick film. (author)