Published September 2002 | Version v1
Journal article Metadata-only

Doping of GaAs layers with Si under conditions of low-temperature molecular beam epitaxy

Creators

  • 1. Siberian Physicotechnical Institute, Tomsk State University, pr. Lenina 36, Tomsk, 634050 (Russian Federation)
  • 2. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021 (Russian Federation)
  • 3. Tomsk State University, pr. Lenina 36, Tomsk, 634050 (Russian Federation)
  • 4. Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent'eva 13, Novosibirsk, 630090 (Russian Federation)

Description

Using the methods of X-ray diffraction, optical absorption in the near-infrared range, and the Hall effect, the influence of growth conditions on the structure and properties of Si-doped GaAs layers grown by low-temperature molecular-beam epitaxy was investigated. The relation between the incorporation of excess As and electrical properties of the layers is analyzed

Additional details

Identifiers

DOI
10.1134/1.1507270;

Publishing Information

Journal Title
Semiconductors
Journal Volume
36
Journal Issue
9
Journal Page Range
p. 953-957
ISSN
1063-7826
CODEN
SMICES

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
35052802
Subject category
S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Numerical Data, Translation
Descriptors DEI
CRYSTAL DOPING; CRYSTAL STRUCTURE; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; EXPERIMENTAL DATA; GALLIUM ARSENIDES; HALL EFFECT; INFRARED SPECTRA; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR MATERIALS; SILICON; THIN FILMS; X-RAY DIFFRACTION
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DATA; DIFFRACTION; ELECTRICAL PROPERTIES; ELEMENTS; EPITAXY; FILMS; GALLIUM COMPOUNDS; INFORMATION; MATERIALS; NUMERICAL DATA; PHYSICAL PROPERTIES; PNICTIDES; SCATTERING; SEMIMETALS; SPECTRA

Optional Information

Notes
Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 36, 1025-1030 (No. 9, 2002); (c) 2002 MAIK ''Nauka / Interperiodica''.