Published April 1981
| Version v1
Journal article
Effect of gamma-neutron and electron irradiation on the GaSe photosensitive structure
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Влияние гамма-нейтронного и электронного облучения на фоточувствительные структуры из GaSe
Publishing Information
- Journal Title
- Fiz. Tekh. Poluprovodn.
- Journal Volume
- 15
- Journal Issue
- 4
- Series
- Fiz. Tekh. Poluprovodn.
- Journal Page Range
- 799-800
- ISSN
- 0015-3222
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 13681402
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- ELECTRONS; FREQUENCY DEPENDENCE; GALLIUM SELENIDES; GAMMA RADIATION; MEDIUM TEMPERATURE; MEV RANGE 10-100; MONOCRYSTALS; NEAR INFRARED RADIATION; NEUTRON FLUX; NEUTRONS; PHOTOSENSITIVITY; PHYSICAL RADIATION EFFECTS
- Descriptors DEC
- BARYONS; CHALCOGENIDES; CRYSTALS; ELECTROMAGNETIC RADIATION; ELEMENTARY PARTICLES; ENERGY RANGE; FERMIONS; GALLIUM COMPOUNDS; HADRONS; INFRARED RADIATION; IONIZING RADIATIONS; LEPTONS; MEV RANGE; NUCLEONS; RADIATION EFFECTS; RADIATION FLUX; RADIATIONS; SELENIDES; SELENIUM COMPOUNDS; SENSITIVITY
Optional Information
- Notes
- Short note; for English translation see the journal Soviet Physics - Semiconductors (USA).