Published May 1988
| Version v1
Journal article
Modern state of neutron activation analysis of semiconductor silicon
Creators
- 1. Gosudarstvennyj Nauchno-Issledovatel'skij i Proektnyj Inst. Redkometallicheskoj Promyshlennosti, Moscow (USSR)
Description
The state of neutron activation methods for the analysis of silicon and their status among non-activation techniques are discussed. The role of semiconductor gamma-spectrometry in the development of instrumental methods is shown. The perspectives of the methods are described in these of a nuclear reactor with a high neutron flux density and sophisticated instrumentation. Problems of the control and removal of surface contaminants in the activation analysis of high-purity silicon are discussed
Additional details
Additional titles
- Original title (Russian)
- Современное состояние нейтронно-аcтивационного метода анализа полупроводникового кремния
Publishing Information
- Journal Title
- Zh. Anal. Khim.
- Journal Volume
- 43
- Journal Issue
- 5
- Series
- Zh. Anal. Khim.
- Journal Page Range
- 773-785
- ISSN
- 0044-4502
- CODEN
- ZAKHA
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 19098490
- Subject category
- S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
- Descriptors DEI
- COMPARATIVE EVALUATIONS; DECONTAMINATION; IMPURITIES; MULTI-ELEMENT ANALYSIS; NEUTRON ACTIVATION ANALYSIS; REVIEWS; SEMICONDUCTOR MATERIALS; SILICON; SURFACE CONTAMINATION; TRACE AMOUNTS
- Descriptors DEC
- ACTIVATION ANALYSIS; CHEMICAL ANALYSIS; CLEANING; CONTAMINATION; DOCUMENT TYPES; ELEMENTS; EVALUATION; MATERIALS; NONDESTRUCTIVE ANALYSIS; SEMIMETALS