Modification of the SOI-like structures by annealing under high hydrostatic pressure

The effect of enhanced hydrostatic pressure during annealing (HP-HT treatment) on creation/transformation of SiO2 in silicon implanted with oxygen (Si:O, oxygen doses 1x1014-1x1016 cm-2) was studied by infrared absorption, photoluminescence and X-ray (synchrotron) methods. The redistribution of oxygen atoms at HP-HT in the Si:O structures, prepared by implantation with low doses (down to 1x1014 cm-2) of oxygen ions, leads to generation of separated clusters having the structure of a SiO2-x network. Enhanced HP stimulates the creation of these clusters. A qualitative explanation of presented results, stressing the role of vacancies in the process of oxygen atoms agglomeration and the influence of compressive stress on the concentration of vacancies, is proposed