Ti-dopant-enhanced photocatalytic activity of a CaFe2O4/MgFe2O4 bulk heterojunction under visible-light irradiation
Creators
- 1. International Advanced Research Center for Powder Metallurgy and New Materials, Hyderabad (India)
- 2. Pohang University of Science and Technology, Pohang (Korea, Republic of)
- 3. Pukyong National University, Busan (Korea, Republic of)
- 4. Korea Basic Science Institute, Busan (Korea, Republic of)
Description
The effect substitution of Ti4+ at the Fe3+ site in a CaFe2O4-MgFe2O4 bulk hetero-junction (BH) lattice photocatalyst was explored and the Ti ion concentration was optimized to fabricate an efficient photocatalyst. A BH consisting of an optimum dopant concentration (Ti+4) level of x = 0.03 exhibited an increased band gap and generated a 1.5 times higher photocurrent. The newly fabricated Ti ion doped photocatalyst showed an enhanced quantum yield (up to ∼13.3%) for photodecomposition of a H2O-CH3OH mixture, as compared to its undoped BH counterpart under visible light (λ ≥ 420 nm). In contrast, the material doped with a very high Ti-dopant concentration displayed deteriorated photochemical properties. An efficient charge-separation induced by Ti-ion doping seems to be responsible for the higher photocatalytic activity in a doped bulk BH.
Additional details
Publishing Information
- Journal Title
- Journal of the Korean Physical Society
- Journal Volume
- 61
- Journal Issue
- 1
- Series
- 16 refs, 10 figs, 1 tab
- Journal Page Range
- p. 73-79
- ISSN
- 0374-4884
INIS
- Country of Publication
- Korea, Republic of
- Country of Input or Organization
- Korea, Republic of
- INIS RN
- 45073853
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CALCIUM COMPLEXES; CRYSTAL DOPING; HETEROJUNCTIONS; IRON IONS; IRRADIATION; MAGNESIUM COMPLEXES; PHOTOCATALYSIS; TITANIUM IONS; VISIBLE RADIATION
- Descriptors DEC
- ALKALINE EARTH METAL COMPLEXES; CATALYSIS; CHARGED PARTICLES; COMPLEXES; ELECTROMAGNETIC RADIATION; IONS; RADIATIONS; SEMICONDUCTOR JUNCTIONS