Published June 19, 1980 | Version v1
Journal article Metadata-only

Laser annealing of low dose Se-implanted GaAs studied by D.L.T.S

Creators

  • 1. Surrey Univ., Guildford (UK)

Description

Deep level transient spectroscopy has been applied to the study of deep levels in GaAs following post-implantation annealing using a Q-switched ruby laser. High concentrations (>1015cm-3) of deep trapping levels are observed in the laser melt region using a forward-bias voltage pulse. (author)

Additional details

Publishing Information

Journal Title
Electron. Lett.
Journal Volume
16
Journal Issue
13
Series
Electron. Lett.
Journal Page Range
512-514
ISSN
0013-5194

INIS

Country of Publication
United Kingdom
Country of Input or Organization
United Kingdom
INIS RN
11558145
Subject category
S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ANNEALING; CRYSTAL DOPING; GALLIUM ARSENIDES; ION IMPLANTATION; LASER-RADIATION HEATING; LEVELS; MELTING; PULSES; Q-SWITCHING; RUBY LASERS; SELENIUM IONS; SPECTROSCOPY; TRAPPING
Descriptors DEC
AMPLIFIERS; ARSENIC COMPOUNDS; ARSENIDES; ATOMIC IONS; CHARGED PARTICLES; GALLIUM COMPOUNDS; HEAT TREATMENTS; HEATING; IONS; LASERS; PHASE TRANSFORMATIONS; PLASMA HEATING; SOLID STATE LASERS