Published 1973
| Version v1
Journal article
X-ray study of lateral strains in ion-implanted silicon
Description
no abstract available
Additional details
Identifiers
- DOI
- 10.1007/bf01395937;
Publishing Information
- Journal Title
- Zeitschrift für Physik A Hadrons and nuclei
- Journal Volume
- 259
- Journal Issue
- 4
- Series
- Z. Phys.
- Journal Page Range
- 313-322
- ISSN
- 0939-7922
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 4067135
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ARGON 40 BEAMS; CRYSTALS; INTERFEROMETRY; ION IMPLANTATION; KEV RANGE 10-100; LAYERS; RADIATION DOSES; SILICON; STRAINS; X-RAY DIFFRACTION
- Descriptors DEC
- ARGON; ARGON ISOTOPES; BEAMS; COHERENT SCATTERING; DIFFRACTION; ELEMENTS; ENERGY RANGE; ION BEAMS; KEV RANGE; NONMETALS; RARE GASES; SCATTERING; SEMIMETALS
Optional Information
- Notes
- 5 figs.; 19 refs.; Updated automatically by Metadata and Full-Text Enrichment Agent