Published July 2014 | Version v1
Journal article Metadata-only

Growth and structural characterization of Cu2ZnSnSe4 compound for solar cells

Creators

  • 1. Univ. Nacional de Colombia, Dept. de Fisica, Bogota (Colombia)
  • 2. Unidad de Estudios Universitarios, Univ. del Rosario, Bogota (Colombia)

Description

This work reports results concerning the effect of the deposition parameters on the structural properties of Cu 2ZnSnSe4 thin films, grown through a chemical reaction of the metallic precursors via coevaporation in a three-stage process. X-ray diffraction measurements revealed that the samples deposited by selenization of Cu and Sn grow in the Cu2Se and SnSe2 phases, respectively. The effect of deposition temperature and Cu/Se mass ratio on the transport properties of Cu2ZnSnSe4 films was analyzed. The electrical behavior of the compound was studied. (author)

Availability note (English)

Available from doi: https://doi.org/10.1139/cjp-2013-0602

Additional details

Identifiers

DOI
10.1139/cjp-2013-0602;

Publishing Information

Journal Title
Canadian Journal of Physics
Journal Volume
92
Journal Issue
7-8
Journal Page Range
p. 902-904
ISSN
0008-4204

INIS

Country of Publication
Canada
Country of Input or Organization
Canada
INIS RN
50023019
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ANTIMONY; COPPER; PHYSICAL VAPOR DEPOSITION; SELENIUM; SOLAR CELLS; THIN FILMS; ZINC
Descriptors DEC
DEPOSITION; DIRECT ENERGY CONVERTERS; ELEMENTS; EQUIPMENT; FILMS; METALS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; SEMIMETALS; SOLAR EQUIPMENT; SURFACE COATING; TRANSITION ELEMENTS

Optional Information

Notes
13 refs., 2 tabs., 5 figs.