A novel approach for the growth of InGaN quantum dots

A novel two-step growth method for creating InGaN quantum dots (QDs) was developed by using a combination of an InxGa1-xN nucleation layer with a platelet structure and an InyGa1-yN formation layer with an indium content lower than that of the In xGa1-xN nucleation layer. The realized QDs were investigated by micro-photoluminescence measurements. We observed sharp emission lines at 4 K with a spectral width down to the spectral resolution limit of the experimental setup of 0.17 meV. This growth concept is discussed in comparison with conventional growth methods. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)