Published October 3, 2012 | Version v1
Journal article

STM-switching of organic molecules on semiconductor surfaces: an above threshold density matrix model for 1,5 cyclooctadiene on Si(100)

  • 1. Institut für Chemie, Universität Potsdam, Karl-Liebknecht-Strasse 24-25, D-14476 Potsdam-Golm (Germany)
  • 2. Fritz-Haber-Institut der Max-Planck-Gesellschaft, Physical Chemistry Department, Faradayweg 4-6, D-14195 Berlin (Germany)
  • 3. Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin (Germany)
  • 4. Institut für Chemie, Humboldt-Universität zu Berlin, Brook-Taylor-Straße 2, D-12489 Berlin (Germany)

Description

The scanning tunnelling microscope (STM)-induced switching of a single cyclooctadiene molecule between two stable conformations chemisorbed on a Si(100) surface is investigated using an above threshold model including a neutral ground state and an ionic excited state potential. Switching was recently achieved experimentally with an STM operated at cryogenic temperatures (Nacci et al 2008 Phys. Rev. B 77 121405(R)) and rationalized by a below threshold model using just a single potential energy surface (Nacci et al 2009 Nano Lett. 9 2997). In the present paper, we show that experimental key findings on the inelastic electron tunnelling (IET) switching can also be rationalized using an above threshold density matrix model, which includes, in addition to the neutral ground state potential, an anionic or cationic excited potential. We use one and two-dimensional potential energy surfaces. Furthermore, the influence of two key parameters of the density matrix description, namely the electronic lifetime of the ionic resonance and the vibrational lifetimes, on the ground state potential are discussed.

Availability note (English)

Available from http://dx.doi.org/10.1088/0953-8984/24/39/394009

Additional details

Publishing Information

Journal Title
Journal of Physics. Condensed Matter
Journal Volume
24
Journal Issue
39
Journal Page Range
[11 p.]
ISSN
0953-8984
CODEN
JCOMEL

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
44041069
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
DENSITY MATRIX; EXCITED STATES; GROUND STATES; LIFETIME; MOLECULES; RESONANCE; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR MATERIALS; SILICON; SURFACES; TUNNEL EFFECT; TWO-DIMENSIONAL CALCULATIONS
Descriptors DEC
ELEMENTS; ENERGY LEVELS; MATERIALS; MATRICES; MICROSCOPY; SEMIMETALS