Published July 1977
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Impurity levels: corrections to the effective mass approximation
Description
Some rigorous results concerning the effective mass approximation used for the calculation of the impurity levels in semiconductors are presented. Each energy level is expressed as an asymptotic series in the inverse of the dielectric constant K, in the case where the impurity potential is 1/μ
Availability note (English)
MF available from INIS under the Report Number.Files
9412685.pdf
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Additional details
Publishing Information
- Imprint Pagination
- 8 p.
- Report number
- CNRS-CPT--77-P-931
INIS
- Country of Publication
- France
- Country of Input or Organization
- France
- INIS RN
- 9412685
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- EFFECTIVE MASS; ENERGY LEVELS; IMPURITIES; MATHEMATICAL MODELS; SEMICONDUCTOR MATERIALS
- Descriptors DEC
- MASS