Published April 14, 2013
| Version v1
Journal article
Strong excitation intensity dependence of the photoluminescence line shape in GaAs1−xBix single quantum well samples
Creators
- 1. Department of Physics, University of Arkansas, 226 Physics Building, Fayetteville, Arkansas 72701 (United States)
- 2. Leibniz-Institute for Crystal Growth, Max-Born-Str. 2, D-12489 Berlin (Germany)
- 3. Institute of Semiconductor Physics, National Academy of Sciences, pr. Nauki 45, Kiev 03028 (Ukraine)
- 4. Department of Electrical Engineering, Arizona State University, Tempe, Arizona 85287-6206 (United States)
- 5. Department of Electrical Engineering, University of Arkansas, 3217 Bell Engineering, Fayetteville, Arkansas 72701 (United States)
- 6. Department of Electrical and Computer Engineering, University of Victoria, Victoria, British Columbia V8W 3P6 (Canada)
Description
A set of high quality single quantum well samples of GaAs1−xBix with bismuth concentrations not exceeding 6% and well widths ranging from 7.5 to 13 nm grown by molecular beam epitaxy on a GaAs substrate at low temperature is studied by means of photoluminescence (PL). It is shown that the PL line shape changes when the exciton reduced mass behavior changes from an anomalous increase (x < 5%) to a conventional decrease (x > 5%). Strongly non-monotonous PL bandwidth dependence on the excitation intensity is revealed and interpreted in terms of optically unresolved contributions from the saturable emission of bound free excitons.
Additional details
Identifiers
- DOI
- 10.1063/1.4801429;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 113
- Journal Issue
- 14
- Journal Page Range
- p. 144308-144308.5
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44060119
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Descriptors DEI
- EXCITATION; GALLIUM ARSENIDES; LAYERS; MASS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUANTUM WELLS; SEMICONDUCTOR MATERIALS; SUBSTRATES
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; EMISSION; ENERGY-LEVEL TRANSITIONS; EPITAXY; GALLIUM COMPOUNDS; LUMINESCENCE; MATERIALS; NANOSTRUCTURES; PHOTON EMISSION; PNICTIDES
Optional Information
- Notes
- (c) 2013 AIP Publishing LLC