Published 1998
| Version v1
Miscellaneous
Comparison of long-time delay in lasing in homo- and heteroepitaxially grown II-VI laser diodes
- 1. Institut fuer Festkoeperphysik - Bereich Halbleiterepitaxie, Bremen (Germany)
Description
no abstract available
Additional details
Publishing Information
- Imprint Title
- Abstracts of 27. International School on Physics of Semiconducting Compounds Jaszowiec '98
- Imprint Pagination
- 175 p.
- Journal Page Range
- p. 46
Conference
- Title
- 27. International School on Physics of Semiconducting Compounds Jaszowiec '98
- Dates
- 7-12 Jun 1998
- Place
- Ustron-Jaszowiec (Poland)
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 31013677
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract, Conference, Non-conventional Literature
- Descriptors DEI
- ALKALINE EARTH METAL COMPOUNDS; CHALCOGENIDES; EPITAXY; LASER MATERIALS; LIGHT EMITTING DIODES; MEETINGS; PHOTON EMISSION; TIME DELAY
- Descriptors DEC
- CRYSTAL GROWTH METHODS; EMISSION; MATERIALS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES
Optional Information
- Notes
- 1 ref