Decay kinetics study of atomic hydrogen in a-Si:(H,O,N) and natural beryl
Description
A method of data processing was applied to the study of decay kinetics of interstial atomic hydrogen in X-irradiated a Sh(H,O,N) and UV-irradiated natural beryl. A system of differential kinetic equations was constructed considering multiple possible reactions. The solutions were evaluated by Runge-Kutta's method of numerical integration. It was assumed that the interstitial atomic hydrogen was proced by radiolytic irradiation of R-H type molecules and trapped at interstitial sites of both materials. The heating releases the atomic hydrogen which quickly is either retrapped, recombined with R-radical left in the matrix or combined with other atomic hydrogen atoms forming H2 molecules. The parameters were fit to a function proportional to (T1/2-T01/2, where T0 is a constant. (author)
Availability note (English)
MF available from INIS under the Report Number.Abstract (Portuguese)
Um metodo de processamento de dados foi aplicado ao estudo da cinetica de decaimento de hidrogenio atomico intersticial em a-Si: (H,O,N) irradiado com raios-X e berilio natural irradiado com ultra violeta. Um sistema de equacoes diferenciais cineticas foi construido considerando possiveis reacoes multiplas. As solucoes foram avaliadas pelo metodo de Runge-Kutta de integracao numerica. Assumiu-se que o hidrogenio atomico interstical foi produzido pela irradiacao radiolitica de moleculas do tipo R-H e retido nos sitios intersticiais de ambos os materiais. O aquecimento libera o hidrogenio atomico que rapidamente e novamente retido, recombinado com o radical R deixado na matriz ou combinado com outros atomos de hidrogenio atomico formando moleculas de H2. Os parametros relacionados aos processos de nao retencao e recombinacao revelaram obedecer a lei de Arrhenius . Por outro lado, o reaprisionamento e parametros de formacao de H2 ajustam-se a uma funcao proporcional a (T1/2-T01/2), onde T0 e uma constante. (M.C.K.)Files
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Additional details
Publishing Information
- Imprint Pagination
- 25 p.
- Report number
- IFUSP-P--779
INIS
- Country of Publication
- Brazil
- Country of Input or Organization
- Brazil
- INIS RN
- 21041000
- Subject category
- S74: ATOMIC AND MOLECULAR PHYSICS;
- Descriptors DEI
- ARRHENIUS EQUATION; BERYL; DATA PROCESSING; DIFFERENTIAL EQUATIONS; HYDROGEN; INTERSTITIALS; IRRADIATION; KINETIC EQUATIONS; MOLECULES; REACTION KINETICS; RUNGE-KUTTA METHOD; SILICON; TRAPPING; ULTRAVIOLET RADIATION; X RADIATION
- Descriptors DEC
- CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTROMAGNETIC RADIATION; ELEMENTS; EQUATIONS; INTERPOLATION; IONIZING RADIATIONS; KINETICS; MINERALS; NONMETALS; NUMERICAL SOLUTION; POINT DEFECTS; RADIATIONS; SEMIMETALS; SILICATE MINERALS