Published April 10, 2006
| Version v1
Journal article
Femtosecond-laser-induced delamination and blister formation in thermal oxide films on silicon (100)
Creators
- 1. Sandia National Laboratories, P.O. Box 969 MS9409, Livermore, California 94551-0969 (United States)
- 2. Center for Ultrafast Optical Science, University of Michigan, 1006 Gerstacker Building, 2200 Bonisteel Avenue, Ann Arbor, Michigan 48109 (United States)
- 3. Department of Materials Science and Engineering and Center for Ultrafast Optical Science, University of Michigan, 2300 Hayward Street, Ann Arbor, Michigan 48109-2136 (United States)
Description
Silicon (100) substrates with thermal oxide films of varying thickness were irradiated with single and multiple 150 fs laser pulses at normal and non-normal incidences. A range of laser fluence was found in which a blister or domelike feature was produced where the oxide film was delaminated from the substrate. At normal and non-normal incidences blister features were observed for samples with 54, 147, and 1200 nm of thermal oxide. The blister features were analyzed with optical and atomic force microscopy. In addition, the time frame for blister growth was obtained using pump-probe imaging techniques
Additional details
Identifiers
- DOI
- 10.1063/1.2193777;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 88
- Journal Issue
- 15
- Journal Page Range
- p. 153121-153121.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37083204
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ATOMIC FORCE MICROSCOPY; BLISTERS; CRYSTAL GROWTH; DIELECTRIC MATERIALS; IRRADIATION; LASERS; OPTICAL MICROSCOPY; OXIDES; PULSES; SEMICONDUCTOR MATERIALS; SILICON; SILICON COMPOUNDS; SUBSTRATES; THIN FILMS
- Descriptors DEC
- CHALCOGENIDES; ELEMENTS; FILMS; MATERIALS; MICROSCOPY; OXYGEN COMPOUNDS; SEMIMETALS
Optional Information
- Notes
- (c) 2006 American Institute of Physics