Published April 10, 2006 | Version v1
Journal article

Femtosecond-laser-induced delamination and blister formation in thermal oxide films on silicon (100)

  • 1. Sandia National Laboratories, P.O. Box 969 MS9409, Livermore, California 94551-0969 (United States)
  • 2. Center for Ultrafast Optical Science, University of Michigan, 1006 Gerstacker Building, 2200 Bonisteel Avenue, Ann Arbor, Michigan 48109 (United States)
  • 3. Department of Materials Science and Engineering and Center for Ultrafast Optical Science, University of Michigan, 2300 Hayward Street, Ann Arbor, Michigan 48109-2136 (United States)

Description

Silicon (100) substrates with thermal oxide films of varying thickness were irradiated with single and multiple 150 fs laser pulses at normal and non-normal incidences. A range of laser fluence was found in which a blister or domelike feature was produced where the oxide film was delaminated from the substrate. At normal and non-normal incidences blister features were observed for samples with 54, 147, and 1200 nm of thermal oxide. The blister features were analyzed with optical and atomic force microscopy. In addition, the time frame for blister growth was obtained using pump-probe imaging techniques

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
88
Journal Issue
15
Journal Page Range
p. 153121-153121.3
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
37083204
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ATOMIC FORCE MICROSCOPY; BLISTERS; CRYSTAL GROWTH; DIELECTRIC MATERIALS; IRRADIATION; LASERS; OPTICAL MICROSCOPY; OXIDES; PULSES; SEMICONDUCTOR MATERIALS; SILICON; SILICON COMPOUNDS; SUBSTRATES; THIN FILMS
Descriptors DEC
CHALCOGENIDES; ELEMENTS; FILMS; MATERIALS; MICROSCOPY; OXYGEN COMPOUNDS; SEMIMETALS

Optional Information

Notes
(c) 2006 American Institute of Physics