Published October 1997
| Version v1
Journal article
Erratum: Structure and electrical conductivity of polycrystalline silicon films grown by molecular-beam deposition accompanied by low-energy ion bombardment of the growth surface [Semiconductors 31, 237-240 (March 1997)]
Description
no abstract available
Additional details
Identifiers
- DOI
- 10.1134/1.1187276;
- PII
- S1063-7826(97)03310-3;
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 31
- Journal Issue
- 10
- Journal Page Range
- p. 1099
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 35046651
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Numerical Data, Translation, No Abstract
- Descriptors DEI
- CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; ENERGY BEAM DEPOSITION; EXPERIMENTAL DATA; ION BEAMS; MOLECULAR BEAMS; MORPHOLOGY; PHYSICAL RADIATION EFFECTS; POLYCRYSTALS; SEMICONDUCTOR MATERIALS; SILICON; TEXTURE; THIN FILMS
- Descriptors DEC
- BEAMS; CRYSTALS; DATA; DEPOSITION; ELECTRICAL PROPERTIES; ELEMENTS; FILMS; INFORMATION; MATERIALS; NUMERICAL DATA; PHYSICAL PROPERTIES; RADIATION EFFECTS; SEMIMETALS; SURFACE COATING
Optional Information
- Notes
- Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 31 (October 1997); (c) 1997 American Institute of Physics