Influence of chemical etching of CdTe high-resistance crystals on their exoelectron emission

The aim of the paper is studying possibility of using exoemission control for analysis of the surface structure of high-ohmic direct-band crystals CdTe subjected to chemical etching. The investigation objects are the p-type crystals with the specific resistance of 108-109 Ohm/cm. It is shown that in the surface layer of CdTe under study exists enough high concentration of charge carriers. The data obtained testify to that the chemical treatment leads to variation of photothermostimulated exoelectron emission of high-ohmic CdTe crystals owing to their structural imperfections