Peculiarities of boron distribution in silicon at ion alloying high doses

Secondary-ion mass spectroscopy and electroreflection spectroscopy are used to study boron distribution in silicon at ion alloying with high doses (> 6.25x1014 cm-2) for 50 and 100 keV implantation energies before and after heat treatment. Differences in measured distributions of total boron concentration and its electro-active part are noted. Possible ways of profile broadening as compared to diffusion length ∼ 2√Dt and arising peculiarity in boron distribution after ion alloying with E=50 keV and D=6.25x1015 cm-2 and the following annealing at T=1000 deg C are discussed