Published April 20, 2009
| Version v1
Journal article
Comment on 'Deep ultraviolet and near infrared photodiode based on n-ZnO/p-silicon nanowire heterojunction at low temperature' [Appl. Phys. Lett. 94, 013503 (2009)]
Creators
- 1. Institute of Photonics, National Changhua University of Education, Changhua 500, Taiwan (China)
Description
no abstract available
Additional details
Identifiers
- DOI
- 10.1063/1.3119197;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 94
- Journal Issue
- 16
- Journal Page Range
- p. 166102-166102.1
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41040115
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- HETEROJUNCTIONS; PHOTODIODES; QUANTUM WIRES; SEMICONDUCTOR MATERIALS; SILICON; SPUTTERING; SURFACE COATING; ULTRAVIOLET RADIATION; ZINC OXIDES
- Descriptors DEC
- CHALCOGENIDES; DEPOSITION; ELECTROMAGNETIC RADIATION; ELEMENTS; MATERIALS; NANOSTRUCTURES; OXIDES; OXYGEN COMPOUNDS; RADIATIONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; SEMIMETALS; ZINC COMPOUNDS
Optional Information
- Notes
- (c) 2009 American Institute of Physics