Published February 1992
| Version v1
Report
Open
Observation of electron polarization above 80% in photoemission from strained III-V compounds
- 1. Stanford Linear Accelerator Center, Menlo Park, CA (United States)
- 2. Wisconsin Univ., Madison, WI (United States). Dept. of Physics
Description
Spin-polarized electron photoemission has been investigated for strained III--V compounds; (1) strained InxGa1-xAs epitaxially grown on a GaAs substrate, and (2) strained GaAs grown on a GaAs1-xPx buffer layer. The lattice mismatched heterostructure results in a highly strained epitaxial layer, and electron spin polarization as high as 90% has been observed
Availability note (English)
MF available from INIS under the Report Number; OSTI as DE92009482; NTIS; INIS; US Govt. Printing Office Dep.Files
23058914.pdf
Files
(272.0 kB)
| Name | Size | Download all |
|---|---|---|
|
md5:5198d3b052ff2e926229e334dfd2f375
|
272.0 kB | Preview Download |
Additional details
Publishing Information
- Imprint Pagination
- 7 p.
- Report number
- SLAC-PUB--5751
Conference
- Title
- Symposium on surface science 3S* 92.
- Dates
- 15-21 Mar 1992.
- Place
- La Plagne (France).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 23058914
- Subject category
- S43: PARTICLE ACCELERATORS; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CHEMICAL VAPOR DEPOSITION; ELECTRON SOURCES; EPITAXY; GALLIUM ARSENIDES; LINEAR ACCELERATORS; PHOTOEMISSION; POLARIZATION; POLARIZED BEAMS; SPIN ORIENTATION
- Descriptors DEC
- ACCELERATORS; ARSENIC COMPOUNDS; ARSENIDES; BEAMS; CHEMICAL COATING; CRYSTAL GROWTH METHODS; DEPOSITION; EMISSION; GALLIUM COMPOUNDS; ORIENTATION; PARTICLE SOURCES; PNICTIDES; RADIATION SOURCES; SECONDARY EMISSION; SURFACE COATING
Optional Information
- Contract/Grant/Project number
- Contract AC03-76SF00515; AC02-76ER00881
- Funding organization
- USDOE, Washington, DC (United States).
- Secondary number(s)
- CONF-9203100--1.