Published March 3, 2014
| Version v1
Journal article
Spin drift in highly doped n-type Si
Creators
- 1. Graduate School of Engineering Science, Osaka University Osaka (Japan)
- 2. Advanced Technology Development Center, TDK Cooperation, Chiba (Japan)
- 3. AIT, Akita Research Institute of Advanced Technology, Akita (Japan)
- 4. Graduate School of Engineering, Kyoto University, Kyoto (Japan)
Description
A quantitative estimation of spin drift velocity in highly doped n-type silicon (Si) at 8 K is presented in this letter. A local two-terminal Hanle measurement enables the detection of a modulation of spin signals from the Si as a function of an external electric field, and this modulation is analyzed by using a spin drift-diffusion equation and an analytical solution of the Hanle-type spin precession. The analyses reveal that the spin drift velocity is linearly proportional to the electric field. The contribution of the spin drift effect to the spin signals is crosschecked by introducing a modified nonlocal four-terminal method
Additional details
Identifiers
- DOI
- 10.1063/1.4867650;
- arXiv
- arXiv:1401.3524v1;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 104
- Journal Issue
- 9
- Journal Page Range
- p. 092409-092409.4
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45104445
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANALYTICAL SOLUTION; CRYSTAL DOPING; DIFFUSION EQUATIONS; ELECTRIC FIELDS; MODULATION; N-TYPE CONDUCTORS; PRECESSION; SILICON; SPIN; TEMPERATURE RANGE 0000-0013 K
- Descriptors DEC
- ANGULAR MOMENTUM; DIFFERENTIAL EQUATIONS; ELEMENTS; EQUATIONS; MATERIALS; MATHEMATICAL SOLUTIONS; PARTIAL DIFFERENTIAL EQUATIONS; PARTICLE PROPERTIES; SEMICONDUCTOR MATERIALS; SEMIMETALS; TEMPERATURE RANGE
Optional Information
- Notes
- (c) 2014 AIP Publishing LLC