Published August 2015 | Version v1
Journal article

Comparison of Point Spread Function in p- and n-Channel CCDs

  • 1. Centre for Electronic Imaging, The Open University, Walton Hall, Milton Keynes, MK7 6AA (United Kingdom)
  • 2. e2v technologies plc., 106 Waterhouse Lane, Chelmsford, CM1 2QU (United Kingdom)

Description

This paper presents a brief review of charge-redistrbution effects in charge-couple devices observed in both flat-field and spot data. Experiments are described that allow such phenomenon to be measured simply in the parallel transfer direction using only equipment capable of providing flat-field illuminations. A more detailed investigation into signal-dependant PSF shape distortions are descibed for both p- and n-channel CCDs of identical design. A number of methods to minimise the effect are presented that include different image electrode configurations and bias levels during integration and novel pixel architectures

Availability note (English)

Available from http://dx.doi.org/10.1088/1748-0221/10/08/C08007

Additional details

Publishing Information

Journal Title
Journal of Instrumentation
Journal Volume
10
Journal Issue
08
Journal Page Range
p. C08007
ISSN
1748-0221

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
47068161
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Descriptors DEI
CHARGE-COUPLED DEVICES; COMPARATIVE EVALUATIONS; CONFIGURATION; ELECTRODES; ILLUMINANCE; IMAGES; REVIEWS; SIGNALS
Descriptors DEC
DOCUMENT TYPES; EVALUATION; SEMICONDUCTOR DEVICES