Published August 2015
| Version v1
Journal article
Comparison of Point Spread Function in p- and n-Channel CCDs
Creators
- 1. Centre for Electronic Imaging, The Open University, Walton Hall, Milton Keynes, MK7 6AA (United Kingdom)
- 2. e2v technologies plc., 106 Waterhouse Lane, Chelmsford, CM1 2QU (United Kingdom)
Description
This paper presents a brief review of charge-redistrbution effects in charge-couple devices observed in both flat-field and spot data. Experiments are described that allow such phenomenon to be measured simply in the parallel transfer direction using only equipment capable of providing flat-field illuminations. A more detailed investigation into signal-dependant PSF shape distortions are descibed for both p- and n-channel CCDs of identical design. A number of methods to minimise the effect are presented that include different image electrode configurations and bias levels during integration and novel pixel architectures
Availability note (English)
Available from http://dx.doi.org/10.1088/1748-0221/10/08/C08007Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Instrumentation
- Journal Volume
- 10
- Journal Issue
- 08
- Journal Page Range
- p. C08007
- ISSN
- 1748-0221
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47068161
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- CHARGE-COUPLED DEVICES; COMPARATIVE EVALUATIONS; CONFIGURATION; ELECTRODES; ILLUMINANCE; IMAGES; REVIEWS; SIGNALS
- Descriptors DEC
- DOCUMENT TYPES; EVALUATION; SEMICONDUCTOR DEVICES